STP80NF75L Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET

STP80NF75L
STB80NF75L STB80NF75L-1
N-CHANNEL 75V - 0.008 Ω - 80A TO-220/D²PAK/I²PAK
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
STP80NF75L
STB80NF75L
STB80NF75L-1
75 V
75 V
75 V
<0.01 Ω
<0.01 Ω
<0.01 Ω
s TYPICAL R_DS(on) = 0.008 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
I_D
80 A
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s SOLENOID AND RELAY DRIVERS
3
1
D²PAK
TO-263
123
I²PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(•)
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM(••) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Current Limited by Package
(••) Pulse width limited by safe operating area.
November 2001
.
Value
75
75
± 16
80
80
320
300
2
12
930
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) I_SD ≤80A, di/dt ≤960A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting Tj = 25 ^oC, ID = 40A, VDD= 40V
1/11