STP80NF55L-08 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET

STP80NF55L-08
STB80NF55L-08
N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D²PAK
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
STP80NF55L-08
STB80NF55L-08
55 V
55 V
0.008Ω
0.008Ω
s TYPICAL R_DS(on) = 0.0065Ω
s LOW THRESHOLD DRIVE
s LOGIC LEVEL DEVICE
I_D
80 A
80 A
3
2
1
3
1
TO-220
D²PAK
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D (1)
Drain Current (continuos) at T_C = 25°C
I_D (1)
Drain Current (continuos) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
E_AS(3) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
April 2003
Value
55
55
± 16
80
80
320
300
2
15
870
–55 to 175
175
(1) Current Limited by Package
(2) I_SD ≤80A, di/dt ≤500A/µs, V_DD =40V T_j ≤ T_JMAX.
(3) Starting Tj=25°C, ID=40A, VDD=40V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
°C
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