STP80NF55L-06 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 55V - 0.005 ohm - 80A TO-220 STripFET POWER MOSFET

®
STP80NF55L-06
N - CHANNEL 55V - 0.005 Ω - 80A TO-220
STripFET™ POWER MOSFET
TYPE
V_DSS
R_{DS(on )}
STP80NF55L-06 55 V < 0.0065 Ω
s TYPICAL RDS(on) = 0.005 Ω
s LOW THRESHOLD DRIVE
s LOGIC LEVEL DEVICE
I_D
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
V_DS Drain-source Voltage (V_GS = 0)
55
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
55
VG S
I_D
I_D
I _DM ( •)
P_tot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
± 20
80
57
320
210
Derating Factor
1.4
EAS (1) Single Pulse Avalanche Energy
1
T_stg Storage Temperature
-65 to 175
T_j Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
( 1) starting Tj = 25 ^oC, ID =40A , VDD = 30V
October 1999
Unit
V
V
V
A
A
A
W
W /^o C
J
o_C
o_C
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