STP80NF55-08 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET

STP80NF55-08
STB80NF55-08 STB80NF55-08-1
N-CHANNEL 55V - 0.0065 Ω - 80A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
V_DSS R_DS(on)
STB80NF55-08/-1
STP80NF55-08
55 V <0.008 Ω
55 V <0.008 Ω
s TYPICAL R_DS(on) = 0.0065Ω
s LOW THRESHOLD DRIVE
I_D
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D²PAK
TO-263
123
I²PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(•)
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM(••) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
E_AS ⁽¹⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Current limited by package
(••) Pulse width limited by safe operating area.
March 2002
.
Value
55
55
± 20
80
57
320
300
2
870
-55 to 175
(1) Starting T_j = 25 ^oC, I_D = 40A, V_DD = 30V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
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