STP80NF55-06 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET

STP80NF55-06
®
STP80NF55-06FP
N - CHANNEL 55V - 0.005Ω - 80A TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
STP80NF55-06
55 V < 0.0065 Ω
STP80NF55-06FP 55 V < 0.0065 Ω
s TYPICAL R_DS(on) = 0.005 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
I_D
80 A
60 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™ ” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
PRELIMINARY DATA
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ram et er
V_DS Drain-source Voltage (V_GS = 0)
V _DGR
V_GS
I_D
I_D
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
I_DM (•) Drain Current (pulsed)
P_tot T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
V_ISO I nsulation W ithstand Voltage (DC)
dv/dt Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1999
Value
Unit
STP80NF55-06 STP55NF 55-06FP
55
V
55
V
± 20
V
80
60
A
57
42
A
320
240
A
210
1. 43
50
0.33
W
W/^oC

2000
V
7
V/ns
-65 to 175
o_C
175
o_C
( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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