STP80NF10 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET™II POWER MOSFET

STP80NF10
STP80NF10FP
N-CHANNEL 100V - 0.012Ω - 80A TO-220/TO-220FP
LOW GATE CHARGE STripFET™II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP80NF10
STP80NF10FP
100 V < 0.015 Ω
100 V < 0.015 Ω
80 A
38 A
s TYPICAL R_DS(on) = 0.012Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
3
2
1
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(*)
Drain Current (continuous) at T_C = 25°C
I_D
I_DM (l)
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
E_AS (2) Single Pulse Avalanche Energy
V_ISO
Insulation Withstand Voltage (DC)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
(*) Limited by Package
September 2002
Value
STP80NF10 STP80NF10FP
100
100
±20
80
38
66
27
320
152
300
45
2
0.3
9
360
-
2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
– 55 to 175
°C
(1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting T_j = 25°C, I_D = 80A, V_DD = 50V
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