STP80NF03L-04 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0034 ohm - 80A TO-220 STripFET POWER MOSFET

®
STP80NF03L-04
N-CHANNEL 30V - 0.0034 Ω - 80A TO-220
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
STP80NF03L-04 30 V < 0.004 Ω
s TYPICAL RDS(on) = 0.0034 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
I_D
80 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
PRELIMINARY DATA
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
V_DS
V_DGR
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
VG S
I_D(••)
I_D
I _DM ( •)
P_tot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
EAS (1) Single Pulse Avalanche Energy
T_stg Storage Temperature
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(••) Current limited by package
November 1999
Va l u e
Unit
30
V
30
V
± 20
V
80
A
56
A
320
A
210
1.43
W
W /^o C
2
J
-65 to 175
o_C
175
o_C
(1) starting Tj = 25 ^oC, ID =40A , VDD =15V
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