STP80NF03L-04-1 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0035ohm - 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET

STP80NF03L-04
STB80NF03L-04 STB80NF03L-04-1
N-CHANNEL 30V - 0.0035 Ω - 80A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
STB80NF03L-04/-1
STP80NF03L-04
30 V <0.004 Ω
30 V <0.004 Ω
s TYPICAL R_DS(on) = 0.0035Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
I_D
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
1
D²PAK
TO-263
123
I²PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB80NF03L-04
STB80NF03L-04T4
STP80NF03L-04
STB80NF03L-04-1
MARKING
80NF03L-04 @
80NF03L-04 @
80NF03L-04 @
80NF03L-04 @
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(**)
Drain Current (continuous) at T_C = 25°C
I_D(**)
Drain Current (continuous) at T_C = 100°C
I_DM(•)
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
February 2003
.
PACKAGE
D²PAK
D²PAK
TO-220
I²PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
Value
30
30
± 20
80
80
320
300
2
2
2.3
-60 to 175
175
(1) I_SD ≤80A, di/dt ≤240A/µs, V_DD ≤ 24V, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 40A, V_DD = 20V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
°C
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