STP80N70F6 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 68 V, 0.0063 typ., 96 A STripFET VI DeepGATE Power MOSFET in TO-220 package

STP80N70F6
N-channel 68 V, 0.0063 Ω typ., 96 A STripFET™ VI DeepGATE™
Power MOSFET in TO-220 package
Datasheet − production data
Features
Order code
STP80N70F6
V_DSS
max.
68 V
R_DS(on) max. I_D P_TOT
< 0.008 Ω
96 A 110 W
(V_GS= 10 V)
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
■ Very low switching gate charge
TAB
3
2
1
TO-220
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
Figure 1. Internal schematic diagram
$4!"
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3
!-V
Table 1. Device summary
Order code
STP80N70F6
Marking
80N70F6
Package
TO-220
Packaging
Tube
December 2012
This is information on a product in full production.
Doc ID 023433 Rev 1
1/13
www.st.com
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