STP80N6F6 Datasheet, PDF (1/12 Pages) STMicroelectronics – High avalanche ruggedness

STP80N6F6
Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A
STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package
Datasheet - production data
Features
TAB
3
2
1
TO-220
Order code
STP80N6F6
V_DS
60 V
R_DS(on) max. I_D
5 mΩ
(1)
80 A
1. Current limited by package
• Designed for automotive applications and
AEC-Q101 qualified
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
Figure 1. Internal schematic diagram
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Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
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structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
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Order code
STP80N6F6
Table 1. Device summary
Marking
Packages
80N6F6
TO-220
January 2014
This is information on a product in full production.
DocID023470 Rev 2
Packaging
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