STP80N06-10 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

STP80N06-10
N - CHANNEL ENHANCEMENT MODE
"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
TYPE
STP80N06-10
VDSS
60 V
RDS(on)
< 0.010 Ω
ID
80 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 8.5 mΩ
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCE TESTED
s HIGH CURRENT CAPABILITY
s 175 ^oC OPERATING TEMPERATURE
s HIGH dV/dt RUGGEDNESS
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s PWM MOTOR CONTROL
s DC-DC & DC-AC CONVERTER
s SYNCROUNOUS RECTIFICATION
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID
Drain Current (continuous) at Tc = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
dV/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1996
Value
60
60
± 20
80
60
320
150
1
5
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/^oC
V/ns
o_C
o_C
1/5