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STP7NE10 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 100V - 0.3 ohm - 7A - TO-220 STripFET POWER MOSFET | |||
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STP7NE10
N - CHANNEL 100V - 0.3 ⦠- 7A - TO-220
STripFET⢠POWER MOSFET
TYPE
STP7NE10
VDSS
RDS(on)
ID
100 V < 0.4 â¦
7A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.3 â¦
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size⢠" strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kâ¦)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(â¢)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
October 1999
Value
100
100
± 20
7
4.9
28
45
0.3
6
-65 to 150
175
(1) ISD â¤7 A, di/dt ⤠200 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
Unit
V
V
V
A
A
A
W
W/oC
V/ns
oC
oC
1/5
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