STP7NB80 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET

STP7NB80
®
STP7NB80FP
N - CHANNEL 800V - 1.2Ω - 6.5A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST P7N B80
ST P7N B80 FP
800 V
800 V
< 1.5 Ω
< 1.5 Ω
6.5 A
6.5 A
s TYPICAL R_DS(on) = 1.2 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V_DS Drain-source Volt age (V_GS = 0)
V _DGR
V_GS
I_D
I_D
I_DM (•)
P_tot
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
V_ISO
T_{s tg}
Insulation Withstand Voltage (DC)
Storage Temperature
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
( *) Limited only maximum temperature allowed
April 1999
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
Un it
STP7NB80 STP7NB80FP
800
V
800
V
± 30
V
6.5
6. 5 (* )
A
4.1
4. 1 (* )
A
26
26
A
135
1.08
40
0.32
W
W /^o C
4.5
4.5
V/ns
--
2000
o_C
-65 to 150
o_C
150
o_C
( 1) ISD ≤ 6.5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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