STP7NB60_07 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 600V - 1.0 Ω - 7.2A TO-220/TO-220FP PowerMESH™ MOSFET

STP7NB60
STP7NB60FP
N-CHANNEL 600V - 1.0 Ω - 7.2A TO-220/TO-220FP
PowerMESH™ MOSFET
Table 1. General Features
Type
V_DSS
R_DS(on)
STP7NB60
600 V
< 1.2 Ω
STP7NB60FP 600 V
< 1.2 Ω
I_D
7.2 A
4.1 A
Figure 1. Package
FEATURES SUMMARY
■ TYPICAL R_DS(on) = 1.0 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/
dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
Part Number
STP7NB60
STP7NB60FP
Marking
P7NB60
P7NB60FP
April 2004
Package
TO-220
TO-220FP
Packaging
TUBE
TUBE
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