STP7NB60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STP7NB60
STP7NB60FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STP7NB60
S TP7NB 60F P
600 V
600 V
< 1.2 Ω
< 1.2 Ω
7.2 A
4.1 A
s TYPICAL RDS(on) = 1.0 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V_DGR
V_GS
I_D
I_D
I_DM ( •)
Ptot
Drain- gate Volt age (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 ^o C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
V_ISO Insulation W it hstand Voltage (DC)
T_stg Storage Temperature
T_j
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
March 1998
Value
ST P7NB60 STP7NB60FP
600
600
± 30
7.2
4.1
4.5
2.6
28.8
28.8
125
40
1.0
0. 32
4.5
4.5

2000
-65 to 150
150
(1) ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t
V
V
V
A
A
A
W
W/^oC
V/ ns
V
o_C
o_C
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