STP7N65M2 Datasheet, PDF (1/18 Pages) STMicroelectronics – Extremely low gate charge

STP7N65M2, STU7N65M2
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2
Power MOSFETs in TO-220 and IPAK packages
Datasheet - production data
TAB
TAB
3
TO-220
2
1
IPAK
123
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STP7N65M2
STU7N65M2
VDS
RDS(on)
max
ID
650 V 1.15 Ω 5 A
650 V 1.15 Ω 5 A
 Extremely low gate charge
 Excellent output capacitance (C_oss) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the MDmesh™ M2 technology.
Thanks to the strip layout associated with an
improved vertical structure, the device exhibits
both low on-resistance and optimized switching
characteristics. It is therefore suitable for the
most demanding high efficiency converters.
S(3)
Order code
STP7N65M2
STU7N65M2
AM01476v1_tab
Table 1: Device summary
Marking
Package
7N65M2
TO-220
7N65M2
IPAK
Packaging
Tube
Tube
May 2015
DocID026788 Rev 3
This is information on a product in full production.
1/18
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