STP7N105K5 Datasheet, PDF (1/18 Pages) STMicroelectronics – Ultra-low gate charge

STP7N105K5, STU7N105K5,
STW7N105K5
N-channel 1050 V, 1.4 Ω typ., 4 A MDmesh™ K5
Power MOSFETs in TO-220, IPAK and TO-247 packages
Datasheet - production data
TAB
TAB
3
IPAK
2
1
TO-220
3
2
1
TO-247
3
2
1
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
VDS
RDS(on) max. ID
PTOT
STP7N105K5
STU7N105K5 1050 V
2Ω
4 A 110 W
STW7N105K5
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
S(3)
Order code
STP7N105K5
STU7N105K5
STW7N105K5
AM01476v1
Table 1: Device summary
Marking
Package
TO-220
7N105K5
IPAK
TO-247
Packaging
Tube
October 2016
DocID026183 Rev 2
This is information on a product in full production.
1/18
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