STP75NF75L Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET

STP75NF75L
STB75NF75L STB75NF75L-1
N-CHANNEL 75V - 0.009 Ω - 75A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
STB75NF75L/-1
STP75NF75L
75 V
75 V
<0.011 Ω
<0.011 Ω
s TYPICAL R_DS(on) = 0.009Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
I_D
75 A
75 A
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s DC MOTOR CONTROL
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D²PAK
TO-263
123
I²PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(•)
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(••) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Current limited by package
(••) Pulse width limited by safe operating area.
April 2002
.
Value
75
75
± 15
75
70
300
300
2
20
680
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) I_SD ≤ 75A, di/dt ≤ 500A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
(2) Starting Tj = 25 ^oC, ID = 37.5A, VDD = 30V
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