STP6NC90Z Datasheet, PDF (1/13 Pages) STMicroelectronics – N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET

STP6NC90Z - STP6NC90ZFP
STB6NC90Z - STB6NC90Z-1
N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP6NC90Z
STP6NC90ZFP
STB6NC90Z
STB6NC90Z-1
900 V
900 V
900 V
900 V
< 1.9 Ω
< 1.9 Ω
< 1.9 Ω
< 1.9 Ω
5.4 A
5.4 A
5.4 A
5.4 A
s TYPICAL R_DS(on) = 1.55Ω
s EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
TO-220
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
(Tabless TO-220)
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (1) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
I_GS
Gate-source Current
V_ESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt
Peak Diode Recovery voltage slope
V_ISO
Insulation Withstand Voltage (DC)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
July 2002
Value
Unit
STP(B)6NC90Z(-1) STP6NC90ZFP
900
V
900
V
± 25
V
5.4
5.4(*)
A
3.43
3.43(*)
A
21
21
A
135
40
W
1.08
0.32
W/°C
±50
mA
3
KV
3
V/ns
--
2000
V
–65 to 150
°C
150
°C
(1)I_SD ≤5.4A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2)_.Limited only by maximum temperature allowed
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