STP6NB80 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

STP6NB80
STP6NB80FP
N - CHANNEL 800V - 1.6 Ω - 5.7A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
ST P6NB8 0
ST P6NB8 0FP
800 V
800 V
< 1.9 Ω
< 1.9 Ω
5.7 A
5.7 A
s TYPICAL RDS(on) = 1.6 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
PRELIMINARY DATA
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V_DS Drain-source Voltage (V_GS = 0)
V DGR
V_GS
I_D
I_D
I_DM (•)
P_tot
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating F actor
dv/dt(1) Peak Diode Recovery voltage slope
V_ISO Insulation Withstand Voltage (DC)
T_stg Storage Temperature
T_j
Max. Operating Junction T emperature
(•) Pulse width limited by safe operating area
(*) Limited only maximum temperature allowed
September 1998
Va l u e
Un it
ST P6NB80 STP6NB80F P
800
V
800
V
± 30
V
5.7
5.7(*)
A
3.6
2
A
22.8
22.8
A
125
40
W
1.0
0.32
W /^o C
4
4
V/ns

2000
V
-65 to 150
o_C
150
o_C
( 1) ISD ≤5.76 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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