STP6NB25 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 250V - 0.9ohm - 6A TO-220/TO-220FP PowerMesh MOSFET

STP6NB25
STP6NB25FP
N-CHANNEL 250V - 0.9Ω - 6A TO-220/TO-220FP
PowerMesh™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP6NB25
250 V < 1.1 Ω
6A
STP6NB25FP
250 V
< 1.1 Ω
3.7 A
s TYPICAL R_DS(on) = 0.9 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest R_DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC-DC & DC-AC CONVERTERS FOR
TELECOM , INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
V_ISO
Insulation Withstand Voltage (DC)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Jun 2000
Value
STP6NB25 STP6NB25FP
250
250
±30
6
3.7
3.8
2.3
24
24
75
30
0.6
0.24
5.5
-
2000
–60 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)I_SD ≤6A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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