STP62NS04Z Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL CLAMPED 12.5m - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

STP62NS04Z
N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220
FULLY PROTECTED MESH OVERLAY™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP62NS04Z CLAMPED <0.015 Ω 62 A
■ TYPICAL R_DS(on) = 0.0125 Ω
■ 100% AVALANCHE TESTED
■ LOW CAPACITANCE AND GATE CHARGE
■ 175 ^oC MAXIMUM JUNCTION
TEMPERATURE
DESCRIPTION
This fully clamped Mosfet is produced by using the latest
advanced Company’s Mesh Overlay process which is
based on a novel strip layout.
The inherent benefits of the new technology coupled with
the extra clamping capabilities make this product
particularly suitable for the harshest operation conditions
such as those encountered in the automotive
environment. Any other application requiring extra
ruggedness is also recommended.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ ABS, SOLENOID DRIVERS
■ POWER TOOLS
Ordering Information
SALES TYPE
STP62NS04Z
MARKING
P62NS04Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DG
Drain-gate Voltage
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DG
Drain Gate Current (continuous)
I_GS
Gate SourceCurrent (continuous)
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
V_ESD
ESD (HBM - C = 100pF, R=1.5 kΩ)
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
March 2004
.
PACKAGE
TO-220
PACKAGING
TUBE
Value
CLAMPED
CLAMPED
CLAMPED
62
37.5
± 50
± 50
248
110
0.74
8
500
8
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
V/ns
mJ
kV
-55 to 175
°C
(1) I_SD ≤40A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 20A, V_DD= 20V
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