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| STP60NS04ZB Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET | |||
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STP60NS04ZB
N-CHANNEL CLAMPED 10m⦠- 60A TO-220
FULLY PROTECTED MESH OVERLAY⢠MOSFET
TYPE
VDSS
RDS(on)
ID
STP60NS04ZB CLAMPED < 0.015 ⦠60 A
s TYPICAL RDS(on) = 0.010 â¦
s 100% AVALANCHE TESTED
s LOW CAPACITANCE AND GATE CHARGE
s 175°C MAXIMUM JUNCTION TEMPERATURE
DESCRIPTION
This fully clamped MOSFET is produced by using
the latest advanced Companyâs Mesh Overlay pro-
cess which is based on a novel strip layout. The in-
herent benefits of the new technology coupled with
the extra clamping capabilities make this product
particularly suitable for the harshest operation con-
ditions such as those encountered in the automotive
environment .Any other application requiring extra
ruggedness is also recommended.
APPLICATIONS
s ABS,SOLENOID DRIVERS
s MOTOR CONTROL
s DC-DC CONVERTERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDG
Drain-gate Voltage
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDG
Drain Gate Current (continuous)
IGS
Gate Source Current (continuous)
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate-Source ESD(HBM-C=100 pF, R=1.5 Kâ¦)
VESD(G-D) Gate-Drain ESD(HBM-C=100 pF, R=1.5 Kâ¦)
VESD(D-S) Drain-Source ESD(HBM-C=100 pF, R=1.5 Kâ¦)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
November 2002
Value
CLAMPED
CLAMPED
CLAMPED
60
42
± 50
± 50
240
150
1
6
4
4
â65 to 175
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
kV
kV
kV
°C
1/8
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