STP60NF10 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET

STB60NF10
STP60NF10
N-CHANNEL 100V - 0.019 Ω - 80A D²PAK/TO-220
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
V_DSS
R_DS(on)
I_D
STB60NF10
STP60NF10
100 V
100 V
< 0.023 Ω
< 0.023 Ω
80 A
80 A
■ TYPICAL R_DS(on) = 0.019 Ω
■ EXTREMELY HIGHL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This MOSFET series realized with STMicroelec-
tronics unique STripFET™ process has specifical-
ly been designed to minimize input capacitance
and gate charge. It is therefore suitable as primary
switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Com-
puter applications. It is also intended for any appli-
cations with low gate drive requirements.
Figure 1:Package
3
1
D²PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH EFFICIENCY DC/DC CONVERTERS,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
■ MOTOR CONTROL
Table 2: Ordering Information
SALES TYPE
STB60NF10T4
STP60NF10
MARKING
B60NF10
P60NF10
Table 3:ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
I_D(*)
Drain Current (continuous) at T_C = 25°C
I_D
I_DM(•)
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
May 2005
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
Value
Unit
100
V
100
V
± 20
V
80
A
66
A
320
A
300
W
2
W/°C
16
V/ns
485
mJ
-55 to 175
°C
(1) I_SD ≤80A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 40A, V_DD = 30V
Rev. 2.0
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