STP60NF03L Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 30V - 0.008 ohm - 60A TO-220 STripFET POWER MOSFET

®
STP60NF03L
N-CHANNEL 30V - 0.008 Ω - 60A TO-220
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
STP60NF03L
30 V < 0.010 Ω
s TYPICAL RDS(on) = 0.008 Ω
s LOW THRESHOLD DRIVE
I_D
60 A
PRELIMINARY DATA
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
3
2
1
TO-220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
Va l u e
V_DS Drain-source Voltage (V_GS = 0)
30
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
30
V_GS G ate-source Volt age
I_D
Drain Current (continuous) at T_c = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
± 20
60
42
I_DM (•) Drain Current (pulsed)
240
P_tot T otal Dissipat ion at T_c = 25 ^oC
100
Derating Factor
0.67
EAS(1) Single Pulse Avalanche Energy
650
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
September 1999
-65 to 175
175
( 1) starting Tj = 25 ^oC, ID = 30A , VDD = 20V
Un it
V
V
V
A
A
A
W
W /^o C
mJ
o_C
o_C
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