STP60NE10 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET

STP60NE10
®
STP60NE10FP
N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
V _DSS
R_DS(on)
STP60NE10
STP60NE10FP
100 V
100 V
< 0.022 Ω
< 0.022 Ω
s TYPICAL RDS(on) = 0.016 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
I_D
60 A
30 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
V_GS
I_D
I_D
I_DM (•)
P_tot
Drain-source Volt age (V_GS = 0)
Drain- gat e Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
V_ISO Insulation Withstand Voltage (DC)
dv/dt Peak Diode Recovery voltage slope
Ts tg Storage Temperature
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 1999
Va l u e
Un it
STP60NE10 STP60NE10FP
100
V
100
V
± 20
V
60
30
A
42
21
A
240
120
A
160
1.06
50
0.37
W
W /^o C

2000
V
7
-65 to 175
175
( 1) ISD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
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