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STP60NE06L-16 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET POWER MOSFET | |||
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STP60NE06L-16
®
STP60NE06L-16FP
N - CHANNEL 60V - 0.014⦠- 60A TO-220/TO-220FP
STripFET⢠POWER MOSFET
TYPE
V DSS
RDS(on)
ID
STP60NE06L-16
60 V < 0.016 ⦠60 A
STP60NE06L-16FP 60 V < 0.016 ⦠35 A
s TYPICAL RDS(on) = 0.014 â¦
s AVALANCHE RUGGED TECHNOLOGY
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique âSingle Feature Sizeâ¢â
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V DS
V DGR
VGS
ID
ID
IDM (â¢)
Ptot
Drain-source Volt age (VGS = 0)
Drain- gat e Voltage (RGS = 20 kâ¦)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
dv/dt Peak Diode Recovery voltage slope
Ts tg Storage Temperature
Tj Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
May 2000
Value
Unit
STP60NE06L-16 STP60NE06L-16FP
60
V
60
V
± 15
V
60
35
A
42
24
A
240
140
A
150
45
W
1
0.3
W /o C

2000
V
6
-65 to 175
175
( 1) ISD ⤠60 A, di/dt ⤠300 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
V/ ns
oC
oC
1/9
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