STP60NE03L-12 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 30V - 0.009 ohm - 60A - T0-220 STripFET POWER MOSFET

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STP60NE03L-12
N - CHANNEL 30V - 0.009 Ω - 60A - T0-220
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP60NE03L-12 30 V < 0.012 Ω 60 A
s TYPICAL RDS(on) = 0.009 Ω
s AVALANCE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100 ^oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 ^oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
V_GS
I_D
I_D
I_DM (•)
P_tot
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
February 1999
Va l u e
Un it
30
V
30
V
± 20
V
60
A
42
A
240
A
100
0.67
W
W /^o C
5.5
V/ns
-65 to 175
o_C
175
o_C
( 1) ISD ≤ 60 A, di/dt ≤ 450 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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