STP60N05-14 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

TYPE
STP60N05-14
STP60N06-14
STP60N05-14
STP60N06-14
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
VDSS
50 V
60 V
RDS(on)
< 0.014 Ω
< 0.014 Ω
ID
60 A
60 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.012 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 ^oC OPERATING TEMPERATURE
s VERY LOW RDS (on)
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-Source Voltage (Vgs = 0)
VDGR Drain-Gate Voltage (Rgs = 20 KΩ)
VGS Gate-Source Voltage
ID
Drain-Current (continuous) at Tc = 25^oC
ID
Drain-Current (continuous) at Tc = 100^oC
IDM(•) Drain-Current (Pulsed)
Ptot Total Dissipation at Tc = 25^oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj
Max Operating Junction Temperature
(•)Pulse width limited by safe operating area
March 1996
Value
STP60N05-14
STP60N06-14
50
60
50
60
± 20
60
50
240
150
1
-
-65 to 175
175
Unit
V
V
V
A
A
A
W/^oC
o_C
V
o_C
o_C
1/5