STP5NC90Z Datasheet, PDF (1/13 Pages) STMicroelectronics – N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET

STP5NC90Z - STP5NC90ZFP
STB5NC90Z - STB5NC90Z-1
N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP5NC90Z/FP
900V
< 2.5Ω
4.6 A
STB5NC90Z/-1
900V
< 2.5Ω
4.6 A
s TYPICAL R_DS(on) = 2.1Ω
s EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
TO-220
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
(Tabless TO-220)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
I_GS
Gate-source Current (*)
V_ESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt
Peak Diode Recovery voltage slope
V_ISO
Insulation Winthstand Voltage (DC)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
December 2002
Value
Unit
STP(B)5NC90Z(-1) STP5NC90ZFP
900
V
900
V
± 25
V
4.6
4.6(*)
A
2.9
2.9(*)
A
18
18
A
125
40
W
1
0.32
W/°C
±50
mA
3
KV
3
V/ns
--
2000
V
–65 to 150
°C
150
°C
(1)I_SD ≤4.6A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(*)_.Limited only by maximum temperature allowed
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