STP5NC50 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh™II MOSFET

STP5NC50 - STP5NC50FP
STB5NC50 - STB5NC50-1
N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D²PAK/I²PAK
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP5NC50
STP5NC50FP
STB5NC50
STB5NC50-1
500 V
500 V
500 V
500 V
< 1.5Ω
< 1.5Ω
< 1.5Ω
< 1.5Ω
5.5A
5.5A
5.5A
5.5A
s TYPICAL R_DS(on) = 1.3Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
TO-220
3
1
D²PAK
TO-220FP
123
I²PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
V_ISO
Insulation Withstand Voltage (DC)
T_j
Operating Junction Temperature
T_stg
Storage Temperature
(•)Pulse width limited by safe operating area
(1)I_SD ≤5.5A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
December 2002
Value
STP5NC50
STB5NC50/-1
STP5NC50FP
500
500
±30
5.5
5.5(*)
3.5
3.5(*)
22
22
100
35
0.8
0.28
3.5
-
2500
-55 to 175
-65 to 175
(*)Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
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