STP5NB60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

STP5NB60
®
STP5NB60FP
N - CHANNEL 600V - 1.8Ω - 5A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST P5N B60
600 V < 2.0 Ω
5A
ST P5N B60 FP
600 V
< 2.0 Ω
3A
s TYPICAL R_DS(on) = 1.8 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V _DGR
V_GS
I_D
I_D
I_DM(•)
P_tot
Drain- gat e Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (cont inuous) at T_c = 25 ^o C
Drain Current (cont inuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
T_{s tg} Storage T emperature
T_j
Max. Operating Junction T emperature
(•) Pulse width limited by safe operating area
September 1999
Value
STP5NB60 STP5NB60FP
600
600
± 30
5
3
3.1
1.9
20
20
100
35
0.8
0.28
4.5
4.5

2000
-65 to 150
150
( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W /^o C
V/ns
V
o_C
o_C
1/9