STP5NB40 Datasheet, PDF (1/7 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STP5NB40
STP5NB40FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
PRELIMINARY DATA
TYPE
STP5NB40
STP5NB40FP
V _DSS
400 V
400 V
R_DS(on)
< 1.8 Ω
< 1.8 Ω
I_D
4.7 A
3.1 A
s TYPICAL R_DS(on) = 1.47 Ω
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s EXTREMELY HIGH dv/dt CAPABILITY
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of Power MOSFETs with
outstanding performance. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
VGS Gat e-source Voltage
ID
Drain Current (continuous) at Tc = 25 ^oC
I_D
Drain Current (continuous) at T_c = 100 ^oC
IDM(•) Drain Current (pulsed)
P_tot Tot al Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
V_ISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
STP5NB40 STP5NB40FP
400
400
± 30
4.7
3.1
3
2
19
19
80
35
0.64
0.28
4.5
4.5

2000
-65 to 150
150
(1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t
V
V
V
A
A
A
W
W/^oC
V/ ns
V
o_C
o_C
October 1997
1/7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.