STP5NB100 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

STP5NB100
®
STP5NB100FP
N - CHANNEL 1000V - 2.4Ω - 5A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
R DS ( o n )
ID
STP5NB100
1000 V < 2.7 Ω
5A
STP5NB100FP 1000 V < 2.7 Ω
5A
ν TYPICAL RDS(on) = 2.4 Ω
ν EXTREMELY HIGH dv/dt CAPABILITY
ν 100% AVALANCHE TESTED
ν VERY LOW INTRINSIC CAPACITANCES
ν GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
ν HIGH CURRENT, HIGH SPEED SWITCHING
ν SWITCH MODE POWER SUPPLIES (SMPS)
ν DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS Drain-source Voltage (VGS = 0)
V_DGR
V_GS
ID
I_D
I_DM(•)
Ptot
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO I nsulat ion W ithst and Voltage (DC)
T_stg Storage Temperature
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
February 2000
Va l u e
STP5NB100 STP5NB100FP
1000
1000
± 30
5
5(*)
3.1
3.1(*)
15.2
15.2
135
40
1.08
0.32
4.5
4 .5

2000
-65 to 150
150
(1) ISD ≤ 5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W/^oC
V/ns
V
o_C
o_C
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