STP5N120 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-channel 1200V - 2.8Ω - 4.4A - TO-220 Zener - protected SuperMESHTM Power MOSFET

Features
STP5N120
N-channel 1200V - 2.8Ω - 4.4A - TO-220
Zener - protected SuperMESH™ Power MOSFET
TARGET SPECIFICATION
Type
STP5N120
V_DSS
1200V
R_DS(on)
< 3.5 Ω
I_D
4.4A
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ ESD improved capability
■ New high voltage benchmark
■ Gate charge minimized
P_W
160W
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs.
Application
■ Switching application
3
2
1
TO-220
Internal schematic diagram
Order code
Part number
STP5N120
Marking
5N120
Package
TO-220
Packaging
Tube
May 2007
Rev 1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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