STP5N105K5 Datasheet, PDF (1/14 Pages) STMicroelectronics – Ultra low gate charge

STP5N105K5
N-channel 1050 V, 2.9 Ω typ., 3 A MDmesh™ K5
Power MOSFET in a TO-220 package
Datasheet - production data
Features
Order code
VDS
RDS(on) max. ID PTOT
STP5N105K5 1050 V
3.5 Ω
3 A 85 W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
AM01476v1
 Worldwide best FOM (figure of merit)
 Ultra low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This N-channel Zener-protected Power MOSFET
is designed using ST’s revolutionary avalanche-
rugged very high voltage MDmesh™ K5
technology, based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance, and ultra-low gate
charge for applications which require superior
power density and high efficiency.
Table 1: Device summary
Order code Marking Package Packaging
STP5N105K5 5N105K5 TO-220 Tube
October 2014
DocID026703 Rev 3
This is information on a product in full production.
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