STP55NF03L Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET

STP55NF03L
N-CHANNEL 30V - 0.01Ω - 55A TO-220
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP55NF03L
30 V <0.013 Ω 55 A
s TYPICAL RDS(on) = 0.01 Ω
s OPTIMIMIZED FOR HIGH SWITCHING
OPERATIONS
s LOW GATE CHARGE
s LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™ ” strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s LOW VOLTAGE DC-DC CONVERTERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s HIGH EFFICIENCY SWITCHING CIRCUITS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
I_DM(•)
P_tot
Drain Current (continuos) at T_C = 100°C
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area.
February 2001
Value
30
30
±15
55
39
220
80
0.53
–60 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
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