STP55NE06L Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STP55NE06L
STP55NE06LFP
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE
STP55NE06L
STP 55N E06LF P
VDSS
60 V
60 V
RDS(on)
< 0.022 Ω
< 0.022 Ω
s TYPICAL R_DS(on) = 0.018 Ω
s EXCEPTIONAL dV/dt CAPABILTY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s HIGH dV/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
ID
55 A
28 A
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
V_GS
I_D
I_D
Drain- gate Volt age (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
I_DM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 ^o C
Derating Factor
V_ISO Insulation W it hstand Voltage (DC)
dV/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
T_j
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
December 1997
3
2
1
TO-220
3
2
1
TO220FP
INTERNAL SCHEMATIC DIAGRAM
V alu e
Unit
STP55NE06L ST P55NE06LFP
60
V
60
V
± 15
V
55
28
A
39
20
A
220
220
A
130
0. 86
35
0.23
W
W/^oC

2000
V
7
-65 to 175
175
(1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
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