STP55NE06 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STP55NE06
STP55NE06FP
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE
ST P55NE06
ST P55NE06FP
V_DSS
60 V
60 V
R_DS(on)
< 0.022 Ω
< 0.022 Ω
s TYPICAL RDS(on) = 0.019 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s HIGH dv/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
I_D
55 A
30 A
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
V_GS
I_D
I_D
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
I_DM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 ^oC
Derating Factor
V_ISO Insulation Withstand Voltage (DC)
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
January 1998
Value
Uni t
STP55NE06 STP55NE06FP
60
V
60
V
± 20
V
55
30
A
39
21
A
220
220
A
130
0.96
35
0.27
W
W/^oC

2000
V
7
V/ ns
-65 to 175
o_C
175
o_C
(1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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