STP53N08 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP53N08
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP53N08
VDSS
80 V
RDS(on)
< 0.024 Ω
ID
53 A
s TYPICAL RDS(on) = 0.018 Ω
s AVALANCE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 ^oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
PRELIMINARY DATA
3
2
1
TO-220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID
Drain Current (continuous) at Tc = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1996
Value
80
80
± 20
53
37
212
150
1
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
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