STP50NE10L Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOSFET

®
STP50NE10L
N - CHANNEL 100V - 0.020Ω - 50A TO-220
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
STP50NE10L
100 V <0.025 Ω
s TYPICAL RDS(on) = 0.020 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE AT 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
I_D
50 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V_DS Drain-source Voltage (V_GS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
V_GS
I_D
I_D
IDM (•)
P_tot
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 1999
Va l u e
Un it
100
V
100
V
± 20
V
50
A
35
A
200
A
150
W
1
W /^o C
6
V/ns
-65 to 175
o_C
175
o_C
( 1) ISD ≤ 50 A, di/dt ≤ 275 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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