STP4NM60_09 Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET

STP4NM60
STD3NM60, STD3NM60-1
N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK
Zener-protected MDmesh™ Power MOSFET
Features
Type
V_DSS
R_DS(on)
(@T_jmax) max
I_D
STD3NM60
STD3NM60-1 650
3A
< 1.5 Ω
STP4NM60
4A
P_W
42 W
69 W
■ High dv/dt and avalanche capabilities
■ Improved ESD capability
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Tight process control and high manufacturing
yields
Applications
■ Switching
Description
Modems technology applies the benefits of the
multiple drain process to STMicroelectronics' well-
known PowerMESH™ horizontal layout structure.
The resulting product offers low on-resistance,
high dv/dt capability and excellent avalanche
characteristics.
Table 1. Device summary
Order code
Marking
STD3NM60
STD3NM60-1
STP4NM60
D3NM60
D3NM60
P4NM60
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
Package
DPAK
IPAK
TO-220
Packing
Tape and reel
Tube
Tube
September 2009
Doc ID 8370 Rev 4
1/17
www.st.com
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