STP4NM60 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh™Power MOSFET

STP4NM60
STD3NM60 - STD3NM60-1
N-CHANNEL 600V - 1.3Ω - 3A TO-220/DPAK/IPAK
Zener-Protected MDmesh™Power MOSFET
TYPE
V_DSS R_DS(on)
I_D
Pw
STP4NM60
STD3NM60
STD3NM60-1
600 V < 1.5 Ω 4 A 69 W
600 V < 1.5 Ω 3 A 42 W
600 V < 1.5 Ω 3 A 42 W
s TYPICAL R_DS(on) = 1.3 Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s IMPROVED ESD CAPABILITY
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
TO-220
3
2
1
IPAK
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
STP4NM60
STD3NM60T4
STD3NM60-1
MARKING
P4NM60
D3NM60
D3NM60
September 2002
PACKAGE
TO-220
DPAK
IPAK
PACKAGING
TUBE
TAPE & REEL
TUBE
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