STP4NC80ZFP Datasheet, PDF (1/14 Pages) STMicroelectronics – N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET

STP4NC80Z - STP4NC80ZFP
STB4NC80Z - STB4NC80Z-1
N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP4NC80Z/FP
800V
< 2.8 Ω
4A
STB4NC80Z/-1
800V
< 2.8 Ω
4A
s TYPICAL R_DS(on) = 2.4 Ω
s EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrat-
ing back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capa-
bility with higher ruggedness performance as re-
quested by a large variety of single-switch
applications.
TO-220
3
1
D²PAK
3
2
1
TO-220FP
I²PAK^{1 2 3}
(Tabless TO-220)
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE
MARKING
STP4NC80Z
P4NC80Z
STP4NC80ZFP
P4NC80ZFP
STB4NC80ZT4
B4NC80Z
STB4NC80Z-1
B4NC80Z
PACKAGE
TO-220
TO-220FP
D²PAK
I²PAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TAPE & REEL
November 2003
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