STP4NC60 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET

STP4NC60 - STP4NC60FP
STB4NC60-1
N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I²PAK
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP4NC60
STP4NC60FP
STB4NC60-1
600V
600V
600V
< 2.2Ω
< 2.2Ω
< 2.2Ω
4.2A
4.2A
4.2A
s TYPICAL R_DS(on) = 1.8Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
TO-220
3
2
1
TO-220FP
I²PAK^{1 2 3}
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
V_ISO
Insulation Withstand Voltage (DC)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)I_SD ≤4.2A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
April 2003
Value
STP(B)4NC60(-1) STP4NC60FP
600
600
±30
4.2
4.2(*)
2.6
2.6(*)
16.8
16.8(*)
100
35
0.8
0.28
3.5
3.5
-
2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
–65 to 150
(*)Limited only by maximum Temperature allowed
°C
1/10