STP4NB50 Datasheet, PDF (1/7 Pages) STMicroelectronics – N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET

STP4NB50
STP4NB50FP
N-CHANNEL 500V - 2.5Ω - 3.8A - TO-220/TO-220FP
PowerMesh™ MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STP4NB50
STP4NB50FP
500 V
500 V
< 2.8 Ω
< 2.8 Ω
3.8 A
2.5 A
s TYPICAL R_DS(on) = 2.5 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM ( )
P_TOT
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T_C = 25°C
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
V_ISO
Insulation Withstand Voltage (DC)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
April 2003
Value
Unit
STP4NB50 STP4NB50FP
500
V
500
V
±30
V
3.8
2.5
A
2.4
1.6
A
15.2
15.2
A
80
0.64
4.5
-
35
0.28
2500
W
W/°C
V/ns
V
–65 to 150
°C
150
°C
(1)I_SD ≤4 A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
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