STP4N20 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 200V - 1.3 ohm - 4A TO-220 POWER MOS TRANSISTOR

®
STP4N20
N - CHANNEL 200V - 1.3 Ω - 4A TO-220
POWER MOS TRANSISTOR
TYPE
V_DSS
R_DS(on)
I_D
STP4N20
200 V < 1.5 Ω
4A
s TYPICAL RDS(on) = 1.3 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 150 ^oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC CONVERTERS & DC-AC INVERTERS
s TELECOMMUNICATION POWER SUPPLIES
s INDUSTRIAL MOTOR DRIVERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
V_GS
I_D
ID
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM (•)
P_tot
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
February 1999
Va l u e
200
200
± 20
4
2.5
16
60
0.48
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /^o C
o_C
o_C
1/8