STP4N150_06 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 1500V - 5Ω - 4A - TO-220/TO-247 Very high PowerMESH™ Power MOSFET

STP4N150
STW4N150
N-channel 1500V - 5Ω - 4A - TO-220/TO-247
Very high PowerMESH™ Power MOSFET
General features
Type
V_DSS
(@Tjmax)
R_DS(on)
I_D
STP4N150
1500 V
<7Ω
4A
STW4N150
1500 V
<7Ω
4A
■ Avalanche ruggedness
■ Gate charge minimized
■ Very low intrinsic capacitances
■ High speed switching
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
3
2
1
TO-220
TO-247
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
STP4N150
STW4N150
August 2006
Marking
P4N150
W4N150
Package
TO-220
TO-247
Rev 4
Packaging
Tube
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www.st.com
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