STP4N150 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET

STP4N150
STW4N150
N-CHANNEL 1500V - 5Ω - 4A TO-220/TO-247
Very High Voltage PowerMESH™ MOSFET
Table 1: General Features
TYPE
V_DSS R_DS(on)
I_D
Pw
STP4N150
STW4N150
1500 V < 7 Ω
1500 V < 7 Ω
4 A 160 W
4 A 160 W
s TYPICAL R_DS(on) = 5 Ω
s AVALANCHE RUGGEDNESS
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s HIGH SPEED SWITCHING
DESCRIPTION
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has de-
signed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
Figure 1: Package
3
2
1
TO-220
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
s SWITCH MODE POWER SUPPLIES
Table 2: Order Codes
SALES TYPE
STP4N150
STW4N150
MARKING
P4N150
W4N150
PACKAGE
TO-220
TO-247
PACKAGING
TUBE
TUBE
July 2005
Rev. 3
1/11