STP4N100 Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP4N100
STP4N100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP4N100
STP4N100FI
VDSS
1000 V
1000 V
R DS( on)
< 3.5 Ω
< 3.5 Ω
ID
4A
2.2 A
s TYPICAL R_DS(on) = 3.1 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW INPUT CAPACITANCE
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
V_{D S} Drain-source Voltage (V_GS = 0)
V_{DG R} Drain- gate Voltage (R_GS = 20 kΩ)
VGS Gate-source Voltage
I_D
Drain Current (continuous) at T _c = 25 ^oC
I_D
Drain Current (continuous) at T _c = 100 ^oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 ^oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1996
Val ue
ST P 4N 10 0
ST P4 N100 F I
1000
1000
± 20
4
2.2
2.5
1.4
16
16
125
40
1
0. 32

2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/^oC
V
o_C
o_C
1/10